3-150 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 1999 ha-2520/883 ha-2522/883 uncompensated, high slew rate operational ampli?rs description description the ha-2520/883 and ha-2522/883 are mono- lithic operational ampli?rs which deliver an unsurpassed combination of speci?ations for slew rate, bandwidth and settling time. these dielectrically isolated ampli?rs are designed for closed loop gains of 3 or greater without exter- nal compensation. in addition, these high performance com- ponents also provide low offset current and high input impedance. the 100v/ s (min) slew rate (80v/ s for ha-2522/883) and fast settling time of these ampli?rs make them ideal com- ponents for pulse ampli?ation and data acquisition designs. to insure compliance with slew rate and transient response speci?ations, all devices are 100% tested for ac perfor- mance characteristics over full temperature. these devices are valuable components for rf and video circuitry requiring wideband operation. for accurate signal conditioning designs, the ha-2520/883 s superior dynamic speci?ations are complemented by 25na (max) offset current (50na for ha-2522/883) and offset voltage adjust capability. ordering information part number temperature range package ha2-2520/883 -55 o c to +125 o c 8 pin can ha2-2522/883 -55 o c to +125 o c 8 pin can ha4-2522/883 -55 o c to +125 o c 20 lead ceramic lcc ha7-2520/883 -55 o c to +125 o c 8 lead cerdip ha7-2522/883 -55 o c to +125 o c 8 lead cerdip features this circuit is processed in accordance to mil-std- 883 and is fully conformant under the provisions of paragraph 1.2.1. high slew rate (ha-2520/883) . . . . . . . . 100v/ s (min) 120v/ s (typ) wide power bandwidth (ha-2520/883) . . 1.5mhz (min) wide gain bandwidth (ha-2520/883) . . . . 10mhz (min) 20mhz (typ) high input impedance (ha-2520/883). . . . . 50m ? (min) 100m ? (typ) low offset current (ha-2520/883) . . . . . . . . 25na (min) 10na (typ) fast settling (0.1% of 10v step) . . . . . . . . . 200ns (typ) low quiescent supply current . . . . . . . . . . 6ma (max) applications data acquisition systems rf ampli?rs video ampli?rs signal generators pulse ampli?ation july 1994 spec number 511004-883 file number 3735 pinouts ha-2520/883, ha-2522/883 (cerdip) top view ha-2522/883 (clcc) top view ha-2520/883, ha-2522/883 (metal can) top view 1 2 3 4 8 7 6 5 comp v+ out bal bal -in +in v- + - 4 5 6 7 8 9101112 13 3212019 15 14 18 17 16 bal nc v- nc nc -in +in nc nc nc v+ out nc nc nc nc bal comp nc nc + - 2 4 6 1 3 7 5 8 comp out -in v- bal +in v+ bal + -
3-151 speci?ations ha-2520/883, ha-2522/883 absolute maximum ratings thermal information voltage between v+ and v- terminals . . . . . . . . . . . . . . . . . . . . 40v differential input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15v voltage at either input terminal . . . . . . . . . . . . . . . . . . . . . . v+ to v- peak output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50ma junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c storage temperature range . . . . . . . . . . . . . . . . . -65 o c to +150 o c esd rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000v lead temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . +300 o c thermal resistance ja jc cerdip package . . . . . . . . . . . . . . . . . . . 115 o c/w 28 o c/w ceramic lcc package . . . . . . . . . . . . . . 75 o c/w 23 o c/w metal can package . . . . . . . . . . . . . . . . . 160 o c/w 75 o c/w package power dissipation limit at +75 o c for t j +175 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mw ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33w metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mw package power dissipation derating factor above +75 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mw/ o c ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . 13.3mw/ o c metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mw/ o c caution: stresses above those listed in ?bsolute maximum ratings?may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not im plied. operating conditions operating temperature range . . . . . . . . . . . . . . . . -55 o c to +125 o c operating supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15v v incm 1/2 (v+ - v-) r l 2k ? table 1. dc electrical performance characteristics device tested at: v supply = 15v, r source = 100 ? , r load = 500k ? , v out = 0v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature ha-2520/883 ha-2522/883 units min max min max input offset voltage v io v cm = 0v 1 +25 o c -8 8 -10 10 mv 2, 3 +125 o c, -55 o c -10 10 -14 14 mv input bias current +i b v cm = 0v, +r s = 100k ? , -r s = 100 ? 1 +25 o c -200 200 -250 250 na 2, 3 +125 o c, -55 o c -400 400 -500 500 na -i b v cm = 0v, +r s = 100 ? , -r s = 100k ? 1 +25 o c -200 200 -250 250 na 2, 3 +125 o c, -55 o c -400 400 -500 500 na input offset current i io v cm = 0v, +r s = 100k ? , -r s = 100k ? 1 +25 o c -25 25 -50 50 na 2, 3 +125 o c, -55 o c -50 50 -100 100 na common mode range +cmr v+ = 5v, v- = -25v 1 +25 o c +10 - +10 - v 2, 3 +125 o c, -55 o c +10 - +10 - v -cmr v+ = 25v, v- = -5v 1 +25 o c - -10 - -10 v 2, 3 +125 o c, -55 o c - -10 - -10 v large signal voltage gain +a vol v out = 0v and +10v, r l = 2k ? 4 +25 o c 10 - 7.5 - kv/v 5, 6 +125 o c, -55 o c 7.5 - 5 - kv/v -a vol v out = 0v and -10v, r l = 2k ? 4 +25 o c 10 - 7.5 - kv/v 5, 6 +125 o c, -55 o c 7.5 - 5 - kv/v common mode rejection ratio +cmrr ? v cm = +10v, v+ = +5v, v- = -25v, v out = -10v 1 +25 o c 80 - 74 - db 2, 3 +125 o c, -55 o c 80 - 74 - db -cmrr ? v cm = -10v, v+ = +25v, v- = -5v, v out = +10v 1 +25 o c 80 - 74 - db 2, 3 +125 o c, -55 o c 80 - 74 - db output voltage swing +v out r l = 2k ? 4 +25 o c10-10-v 5, 6 +125 o c, -55 o c10 - 10 - v -v out r l = 2k ? 4 +25 o c - -10 - -10 v 5, 6 +125 o c, -55 o c - -10 - -10 v spec number 511004-883
3-152 spec number 511004-883 speci?ations ha-2520/883, ha-2522/883 output current +i out v out = -10v 4 +25 o c 10 - 10 - ma 5, 6 +125 o c, -55 o c 7.5 - 7.5 - ma -i out v out = +10v 4 +25 o c - -10 - -10 ma 5, 6 +125 o c, -55 o c - -7.5 - -7.5 ma quiescent power supply current +i cc v out = 0v, i out = 0ma 1 +25 o c-6-6ma 2, 3 +125 o c, -55 o c - 6.5 - 7 ma -i cc v out = 0v, i out = 0ma 1 +25 o c -6 - -6 - ma 2, 3 +125 o c, -55 o c -6.5 - -7 - ma power supply rejection ratio +psrr ? v sup = 10v, v+ = +20v, v- = -15v, v+ = +10v, v- = -15v 1 +25 o c 80 - 74 - db 2, 3 +125 o c, -55 o c 80 - 74 - db -psrr ? v sup = 10v, v+ = +15v, v- = -20v, v+ = +15v, v- = -10v 1 +25 o c 80 - 74 - db 2, 3 +125 o c, -55 o c 80 - 74 - db offset voltage adjustment +v io adj note 1 1 +25 o cv io -1 - v io -1 - mv 2, 3 +125 o c, -55 o cv io -1 - v io -1 - mv -v io adj note 1 1 +25 o cv io +1 - v io +1 - mv 2, 3 +125 o c, -55 o cv io +1 - v io +1 - mv note: 1. offset adjustment range is [v io (measured) 1mv] minimum referred to output. this test is for functionality only to assure adjustment through 0v. table 2. ac electrical performance characteristics device tested at: v supply = 15v, r source = 50 ? , r load = 2k ? , c load = 50pf, a vcl = +3v/v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature ha-2520/883 ha-2522/883 units min max min max slew rate +sr v out = -5v to +5v 25% +sr 75% 7 +25 o c 100 - 80 - v/ s 8a, 8b +125 o c, -55 o c 84 - 60 - v/ s -sr v out = +5v to -5v 75% -sr 25% 7 +25 o c 100 - 80 - v/ s 8a, 8b +125 o c, -55 o c 84 - 60 - v/ s rise and fall time t r v out = 0 to +200mv 10% t r 90% 7 +25 o c - 50 - 50 ns 8a, 8b +125 o c, -55 o c - 55 - 60 ns t f v out = 0 to -200mv 10% t f 90% 7 +25 o c - 50 - 50 ns 8a, 8b +125 o c, -55 o c - 55 - 60 ns overshoot +os v out = 0 to +200mv 7 +25 o c-40-50% 8a, 8b +125 o c, -55 o c- 45 - 60% -os v out = 0 to -200mv 7 +25 o c-40-50% 8a, 8b +125 o c, -55 o c- 45 - 60% table 1. dc electrical performance characteristics (continued) device tested at: v supply = 15v, r source = 100 ? , r load = 500k ? , v out = 0v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature ha-2520/883 ha-2522/883 units min max min max
3-153 spec number 511004-883 speci?ations ha-2520/883, ha-2522/883 table 3. electrical performance characteristics device characterized at: v supply = 15v, r load = 2k ? , c load = 50pf, a v 3, c comp = 0pf, unless otherwise speci?d. parameters symbol conditions notes temperature ha-2520/883 ha-2522/883 units min max min max differential input resistance r in v cm = 0v 1 +25 o c50-40-m ? full power bandwidth gbwp v o = 200mv, f o = 10khz 1 +25 o c 10 - 10 - mhz v o = 200mv, f o = 1mhz 1 +25 o c 10 - 10 - mhz full power bandwidth fpbw v peak = 10v 1, 2 +25 o c 1.6 - 1.2 - mhz minimum closed loop stable gain clsg r l = 2k ? , c l = 50pf 1 -55 o c to +125 o c +3 - +3 - v/v quiescent power consumption pc v out = 0v, i out = 0ma 1, 3 -55 o c to +125 o c - 195 - 210 mw notes: 1. parameters listed in table 3 are controlled via design or process parameters and are not directly tested at ?al production. these param- eters are lab characterized upon initial design release, or upon design changes. these parameters are guaranteed by characteriz ation based upon data from multiple production runs which re?ct lot to lot and within lot variation. 2. full power bandwidth guarantee based on slew rate measurement using fpbw = slew rate/(2 v peak ). 3. quiescent power consumption based upon quiescent supply current test maximum. (no load on outputs.) table 4. electrical test requirements mil-std-883 test requirements subgroups (see tables 1 and 2) interim electrical parameters (pre burn-in) 1 final electrical test parameters 1 (note 1), 2, 3, 4, 5, 6, 7, 8a, 8b group a test requirements 1, 2, 3, 4, 5, 6, 7, 8a, 8b groups c and d endpoints 1 note: 1. pda applies to subgroup 1 only.
3-154 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/o r speci?ations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site http://www.intersil.com ha-2520/883, ha-2522/883 die characteristics die dimensions: 67 x 57 x 19 mils 1 mils 1700 x 1440 x 483 m 25.4 m metallization: type: al, 1% cu thickness: 16k ? 2k ? glassivation: type: nitride (si3n4) over silox (sio2, 5% phos.) silox thickness: 12k? 2k? nitride thickness: 3.5k? 1.5k? worst case current density: 0.26 x 10 5 a/cm 2 substrate potential (powered up): unbiased transistor count: ha-2520/883: 40 ha-2522/883: 40 process: bipolar dielectric isolation metallization mask layout ha-2520/883, ha-2522/883 comp v+ out bal bal -in +in v- spec number 511004-883
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